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DMN2005DLP4K
0.8
0.8
V GS = 4.5V
0.6
V GS = 1.8V
0.6
T A = 150°C
0.4
0.2
V GS = 2.5V
V GS = 4.5V
0.4
0.2
T A = 125°C
T A = 85°C
T A = 25°C
T A = -55°C
0
0
0.4 0.8 1.2 1.6
2.0
0
0
0.4 0.8 1.2 1.6
1.6
I D , DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
V GS = 4.5V
0.8
I D , DRAIN CURRENT (A)
Figure 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
1.4
1.2
I D = 1.0A
V GS = 2.5.V
I D = 500mA
0.6
0.4
V GS = 2.5V
I D = 500mA
1.0
0.8
0.2
V GS = 4.5V
I D = 1.0A
0.6
-50
-25 0 25 50 75 100 125 150
0
-50
-25 0 25 50 75 100 125 150
1.2
1.0
T J , JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
1.6
T J , JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
1.2
T A = 25°C
0.8
I D = 1mA
0.6
I D = 250μA
0.8
0.4
0.4
0.2
0
-50
-25
0 25 50 75 100 125 150
0
0
0.2
0.4 0.6 0.8 1.0 1.2
T A , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
V SD , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
DMN2005DLP4K
Document number: DS30801 Rev. 9 - 2
3 of 5
www.diodes.com
June 2012
? Diodes Incorporated
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